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unisonic technologies co., ltd 88cxx cmos ic www.unisonic.com.tw 1 of 13 copyright ? 2010 unisonic technologies co., ltd qw-r502-040,e built-in delay circuit high-precision voltage detector ? description the utc 88cxx series are highly accurate, low power consumption voltage detector, m anufactured using cmos process. the detection voltage is fixed internally, with an accuracy of 2.0%. besides, utc 88cxx can easily delay a release signal by attachment of an external capacitor with built-in delay circuit. ? features * highly accurate : 2.0% * hysteresis characteristics: 5% typ. * ultra-low current consumption: 1.0 a typ. (v dd =2.0v) * detection voltage ranges: 1.5~6v and step by 0.1v. * low operating voltage based on detection voltage * delay time setting by an additional external capacitor. sot-25 1 3 5 2 4 ? ordering information ordering number normal lead free halogen free package packing 88CXX-AF5-R 88cxxl-af5-r 88cxxg-af5-r sot-25 tape reel
88cxx cmos ic unisonic technologies co., ltd 2 of 13 www.unisonic.com.tw qw-r502-040,e ? marking information package voltage code marking sot-25 15:1.5v 16:1.6v 17:1.7v 18:1.8v 19:1.9v 20:2.0v 21:2.1v 22:2.2v 23:2.3v 24:2.4v 25:2.5v 26:2.6v 27:2.7v 28:2.8v 29:2.9v 30:3.0v 31:3.1v 32:3.2v 33:3.3v 34:3.4v 35:3.5v 36:3.6v 37:3.7v 38:3.8v 39:3.9v 40:4.0v 41:4.1v 42:4.2v 43:4.3v 44:4.4v 45:4.5v 46:4.6v 47:4.7v 48:4.8v 49:4.9v 50:5.0v 51:5.1v 52:5.2v 53:5.3v 60:6.0v ? pin configuration pin no. pin name 1 v out 2 v dd 3 v ss 4 nc 5 c d
88cxx cmos ic unisonic technologies co., ltd 3 of 13 www.unisonic.com.tw qw-r502-040,e ? block diagrams v ref v in + - v out v ss delay circuit cd
88cxx cmos ic unisonic technologies co., ltd 4 of 13 www.unisonic.com.tw qw-r502-040,e ? absolute maximum ratings (t a =25 , unless otherwise specified.) parameter symbol ratings unit power supply voltage v dd -vss 12 v c d terminal input voltage v cd v ss -0.3 ~ v dd +0.3 v output voltage v out v ss -0.3 ~ v dd +0.3 v output current i out 50 ma power dissipation p d 250 mw operating temperature t opr -40 ~ +85 storage temperature t stg -40 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified.) detection voltage (1.5v ~ 2.6v) parameter symbol test conditons min typ max unit detect voltage v det -v det 0.98 -v det -v det 1.02 v hysteresis range v hys -v det 0.03 -v det 0.05 -v det 0.08 v supply current i ss v dd =3.5v 1.2 5.0 a operating voltage v dd 0.95 10.0 v nch v ds =0.5v v dd =1.20v 0.23 0.50 ma output current i out pch v ds =0.5v v dd =4.8v 0.36 0.62 ma detect voltage temperature characteristics v det t opr v det 100 ppm/ delay time t dly v dd =3.5v, c d =4.7nf 23 30 37 ms detection voltage (2.7v ~ 3.9v) parameter symbol test conditons min typ max unit detect voltage v det -v det 0.98 -v det -v det 1.02 v hysteresis range v hys -v det 0.03 -v det 0.05 -v det 0.08 v supply current i ss v dd =4.5v 1.3 5.0 a operating voltage v dd 0.95 10.0 v v dd =1.20v 0.23 0.50 ma nch v ds =0.5v v dd =2.40v 1.60 3.70 ma output current i out pch v ds =0.5v v dd =4.8v 0.36 0.62 ma detect voltage temperature characteristics v det t opr v det 100 ppm/ delay time t dly v dd =4.5v, c d =4.7nf 20 28 34 ms
88cxx cmos ic unisonic technologies co., ltd 5 of 13 www.unisonic.com.tw qw-r502-040,e ? electrical characteristics(cont.) detection voltage (4.0v ~ 5.4v) parameter symbol test conditons min typ max unit detect voltage v det -v det 0.98 -v det -v det 1.02 v hysteresis range v hys -v det 0.03 -v det 0.05 -v det 0.08 v supply current i ss v dd =6.0v 1.5 5.0 a operating voltage v dd 0.95 10.0 v v dd =1.20v 0.23 0.50 ma nch v ds =0.5v v dd =2.40v 1.60 3.70 ma output current i out pch v ds =0.5v v dd =6.0v 0.46 0.75 ma detect voltage temperature characteristics v det t opr v det 100 ppm/ delay time t dly v dd =7.0v, c d =4.7nf 12 17 22 ms detection voltage (5.5v ~ 6.0v) parameter symbol test conditons min typ max unit detect voltage v det -v det 0.98 -v det -v det 1.02 v hysteresis range v hys -v det 0.03 -v det 0.05 -v det 0.08 v supply current i ss v dd =7.5v 1.4 5.0 a operating voltage v dd 12 v v dd =1.20v 0.23 0.50 ma nch v ds =0.5v v dd =2.40v 1.60 3.70 ma output current i out pch v ds =0.5v v dd =4.8v 2.08 3.42 ma detect voltage temperature characteristics v det t opr v det 100 ppm/ delay time t dly v dd =7.5v, c d =4.7nf 12 17 22 ms
88cxx cmos ic unisonic technologies co., ltd 6 of 13 www.unisonic.com.tw qw-r502-040,e ? dectection voltage range vs. hysteresis width detection voltage range (v) hysteresis width v hys typ (v) detection voltage range (v) hysteresis width v hys typ (v) 1.5v2.0% 0.075 3.6v2.0% 0.180 1.6v2.0% 0.080 3.7v2.0% 0.185 1.7v2.0% 0.085 3.8v2.0% 0.190 1.8v2.0% 0.090 3.9v2.0% 0.195 1.9v2.0% 0.095 4.0v2.0% 0.200 2.0v2.0% 0.100 4.1v2.0% 0.205 2.1v2.0% 0.105 4.2v2.0% 0.210 2.2v2.0% 0.110 4.3v2.0% 0.215 2.3v2.0% 0.115 4.4v2.0% 0.220 2.4v2.0% 0.120 4.5v2.0% 0.225 2.5v2.0% 0.125 4.6v2.0% 0.230 2.6v2.0% 0.130 4.7v2.0% 0.235 2.7v2.0% 0.135 4.8v2.0% 0.240 2.8v2.0% 0.140 4.9v2.0% 0.245 2.9v2.0% 0.145 5.0v2.0% 0.250 3.0v2.0% 0.150 5.1v2.0% 0.255 3.1v2.0% 0.155 5.2v2.0% 0.260 3.2v2.0% 0.160 5.3v2.0% 0.265 3.3v2.0% 0.165 6.0v2.0% 0.300 3.4v2.0% 0.170 3.5v2.0% 0.175 ? output configurations implementation cmos with different power supplies no with active low reset cpus yes with active high reset cpus no with voltage divider variable resistors no example with one power supply vdd v/d cmos vss cpu out cd
88cxx cmos ic unisonic technologies co., ltd 7 of 13 www.unisonic.com.tw qw-r502-040,e ? typical characteristics 88c25 2.80 2.70 2.60 2.50 2.40 2.30 2.20 -40 -20 0 20 40 60 80 temperature,ta( ) detection voltage,v det (v) detection voltage vs. temperature -40 -20 0 20 40 60 80 temperature, ta( ) 3 4 5 6 7 8 hysteresis voltage width,v hys (%) hystersis voltage width vs. temperature +v det -v det 2.5 2.0 1.5 1.0 0.5 0.0 02 4 6 81012 input voltage, v dd (v) current consumption, iss ( a) current consumption vs. input voltage 3.0 3.5 t a =25 pch transistor output current vs v ds 20 15 0 0 2 4 v ds (v) 6 v dd =7.2v v dd =6.0v v dd =4.8v v dd =3.6v 10 5 v dd =8.4v 8 10 t a =25 pch transistor output current, i out (ma) 1 10 100 1000 response time (s) 0.1 1 100 10 load capacitance (nf) t phl dynamic response vs. c out (cd pin; open) 0.1 12 10 8 6 0 00.51.0 v ds (v) 1.5 v dd =2.4v v dd =1.2v 4 2 22.5 nch transistor output current, i out (ma) nch transistor output current - v ds t plh t a =25 t a =25
88cxx cmos ic unisonic technologies co., ltd 8 of 13 www.unisonic.com.tw qw-r502-040,e ? typical characteristics(cont.) -40 -20 0 20 40 60 80 temperature,ta( ) 0.0 0.5 1.0 1.5 2.0 current consumpation vs. tempreature v dd =3.5v current consumpation ,i ss (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5 1.5 0 12 input voltage,v dd (v) nch transistor output current ,i out (ma) nch transisor output current vs. input voltage v ds =0.5v 2.5 4.0 4.5 5.0 t a =-40 t a =25 t a =85 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 048 12 610 input voltage,v dd (v) pch transistor output current, i out (ma) pch transistor output current vs. input voltage v ds =0.5v 3.5 4.0 t a =-40 t a =25 t a =85 -40 -20 0 20 40 60 80 temperature,ta( ) 0 10 20 30 40 delay time,td(ms) delay time vs temperature c d =4.7nf 10 100 1000 1 0.1 0.01 10 1000 1 0.1 0.01 100 cd pin capacitance,c d (nf) delay time,td(ms) delay time vs cd pin capacitance ta=25 3 3.5
88cxx cmos ic unisonic technologies co., ltd 9 of 13 www.unisonic.com.tw qw-r502-040,e ? typical characteristics(cont.) 88c28 2.80 2.70 2.60 2.50 2.40 3.00 2.90 -40 -20 0 20 40 60 80 temperature,ta( ) detection voltage,v det (v) detection voltage vs. temperature -40 -20 0 20 40 60 80 temperature,ta( ) 3 4 5 6 7 8 hysteresis voltage width,v hys (%) hystersis voltage width vs. temperature +v det -v det 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 input voltage, v dd (v) current consumption, iss ( a) current consumption vs. input voltage 3.0 3.66 t a =25 pch transistor out put current vs. v ds 20 15 0 0 2 4 vds (v) 6 v dd =7.2v v dd =6.0v v dd =4.8v v dd =3.6v 10 5 v dd =8.4v 810 t a =25 pch transistor output current, i out (ma) 1 10 100 1000 response time (s) 0.1 1 100 10 load capacitance (nf) t phl ta=25 dynamic response vs. c out (cd pin; open) 0.1 t plh 12 10 8 6 0 0 0.5 1.0 v ds (v) 1.5 v dd =2.4v v dd =1.2v 4 2 2.0 2.5 nch transistor output current, i out (ma) nch transistor ou tput current - v ds ta=25
88cxx cmos ic unisonic technologies co., ltd 10 of 13 www.unisonic.com.tw qw-r502-040,e ? typical characteristics(cont.) -40 -20 0 20 40 60 80 temperature,ta( ) 0.0 0.5 1.0 1.5 2.0 current consumpation vs. tempreature v dd =4.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5 1.5 012 input voltage,v dd (v) nch transisor output current vs. input voltage v ds =0.5v 2.5 4.0 4.5 5.0 t a =-40 t a =25 t a =85 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 048 12 610 input voltage,v dd (v) pch transistor output current vs. input voltage v ds =0.5v 3.5 4.0 t a =-40 t a =25 t a =85 4.5 -40 -20 0 20 40 60 80 temperature,ta( ) 0 10 20 30 40 delay time vs. temperature c d =4.7nf 10 100 1000 1 0.1 0.01 10 1000 1 0.1 10000 100 cd pin capacitance,c d (nf) delay time vs. cd pin capacitance ta=25 50 3 3.5
88cxx cmos ic unisonic technologies co., ltd 11 of 13 www.unisonic.com.tw qw-r502-040,e ? typical characteristics(cont.) 88c33 3.60 3.55 3.50 3.45 3.40 3.35 3.30 -40 -20 0 20 40 60 80 temperature,ta( ) detection voltage,v det (v) detection voltage vs. temperatyre -40 -20 0 20 40 60 80 temperature,ta( ) 3 4 5 6 7 8 hysteresis voltage width,v hys (%) hystersis voltage width vs. temperature +v det -v det 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 input voltage, v dd (v) current consumption, iss ( a) current consumption vs. input voltage 3.0 3.5 t a =25 4.0 4.5 pch transistor output current vs v ds 20 15 0 0 2 4 vds (v) 6 v dd =7.2v v dd =6.0v v dd =4.8v 10 5 v dd =8.4v 8 10 t a =25 pch transistor output current, i out (ma) 1 10 100 1000 response time (s) 0.1 1 100 10 load capacitance (nf) t phl ta=25 dynamic response vs. c out (cd pin; open) 0.1 t plh 12 10 8 6 0 0 0.5 1.0 v ds (v) 1.5 v dd =2.4v v dd =1.2v 4 2 2.0 2.5 nch transistor output current, i out (ma) nch transistor output current - v ds ta=25
88cxx cmos ic unisonic technologies co., ltd 12 of 13 www.unisonic.com.tw qw-r502-040,e ? typical characteristics(cont.) -40 -20 0 20 40 60 80 temperature,ta( ) 0.0 0.5 1.0 2.0 2.5 current consumpation vs. tempreature v dd =4.5v current consumpation ,i ss (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5 1.5 0 1 2 input voltage,v dd (v) nch transistor output current ,i out (ma) nch transisor output current vs. input voltage v ds =0.5v 3.5 4.0 4.5 5.0 t a =-40 t a =25 t a =85 1.5 3 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 048 12 610 input voltage,v dd (v) pch transistor output current,i out (ma) pch transistor output current vs. input voltage v ds =0.5v 3.5 4.0 t a =-40 t a =25 t a =85 4.5 -40 -20 0 20 40 60 80 temperature,ta( ) 0 10 20 30 40 delay time,td(ms) delay time vs. temperature c d =4.7nf 10 100 1000 1 0.1 0.01 10 1000 1 0.1 10000 100 cd pin capacitance,c d (nf) delay time,td(ms) delay time vs. cd pin capacitance ta=25 50 60 2.5
88cxx cmos ic unisonic technologies co., ltd 13 of 13 www.unisonic.com.tw qw-r502-040,e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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